A Comparative Study of MOVPE Growth of InN on GaAs(111) Substrates Using a Nitrided or Grown GaN Buffer Layer

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.

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Two-step MOVPE growth for planar InP/InGaAs/InP pin-FET combinations with locally diffused buffer layer

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90567-o ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 840-844

Author(s):

G. Ebbinghaus ◽

R. Strzoda ◽

T. Scherg ◽

H. Albrecht ◽

R. Penz ◽

...

Keyword(s):

Buffer Layer ◽

Movpe Growth

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Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer

MRS Proceedings ◽

10.1557/proc-572-295 ◽

1999 ◽

Vol 572 ◽

Cited By ~ 2

Author(s):

S. Ruvimov ◽

Z. Liliental-Weber ◽

J. Washburn ◽

Y. Kim ◽

G. S. Sudhir ◽

...

Keyword(s):

Dislocation Density ◽

Buffer Layer ◽

Defect Formation ◽

Flux Ratio ◽

Growth Conditions ◽

Buffer Layers ◽

Simultaneous Increase ◽

Growth Stages ◽

Dislocation Generation ◽

Gan Buffer Layer

ABSTRACTTransmission electron microscopy was employed to study the effect of N/Ga flux ratio in the growth of GaN buffer layers on the structure of GaN epitaxial layers grown by molecular-beamepitaxy (MBE) on sapphire. The dislocation density in GaN layers was found to increase from 1×1010 to 6×1010 cm−2 with increase of the nitrogen flux from 5 to 35 sccm during the growth of the GaN buffer layer with otherwise the same growth conditions. All GaN layers were found to contain inversion domain boundaries (IDBs) originated at the interface with sapphire and propagated up to the layer surface. Formation of IDBs was often associated with specific defects at the interface with the substrate. Dislocation generation and annihilation were shown to be mainly growth-related processes and, hence, can be controlled by the growth conditions, especially during the first growth stages. The decrease of electron Hall mobility and the simultaneous increase of the intensity of “green” luminescence with increasing dislocation density suggest that dislocation-related deep levels are created in the bandgap.

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High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes

Applied Surface Science ◽

10.1016/j.apsusc.2018.12.011 ◽

2019 ◽

Vol 471 ◽

pp. 231-238 ◽

Cited By ~ 43

Author(s):

Shengjun Zhou ◽

Haohao Xu ◽

Hongpo Hu ◽

Chengqun Gui ◽

Sheng Liu

Keyword(s):

Buffer Layer ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

High Quality ◽

Light Emitting ◽

Isoelectronic Doping ◽

Ultraviolet Light Emitting Diodes ◽

Gan Buffer Layer

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Time Evolution of a High-temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD

Transactions on Electrical and Electronic Materials ◽

10.4313/teem.2006.7.1.036 ◽

2006 ◽

Vol 7 (1) ◽

pp. 36-41 ◽

Cited By ~ 1

Author(s):

Kyung-Hwa Chang ◽

Sung-Il Cho ◽

Myoung-Seok Kwon

Keyword(s):

High Temperature ◽

Low Temperature ◽

Buffer Layer ◽

Time Evolution ◽

Low Pressure ◽

Low Pressure Mocvd ◽

Gan Buffer Layer

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Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

Science Intensive Technologies ◽

10.18127/j19998465-202102-02 ◽

2021 ◽

Author(s):

Than Phyo Kyaw

Keyword(s):

Buffer Layer ◽

Layer Thickness ◽

Breakdown Voltage ◽

Carbon Doping ◽

Avalanche Breakdown ◽

Gate Length ◽

20 Nm ◽

Gan Buffer Layer ◽

Effect Of Doping

The influence of the GaN buffer layer doped with carbon on the avalanche breakdown effect of normally open HEMT AlGaN / AlN / GaN transistors was studied. The avalanche breakdown was simulated in a structure where the gate length is LG = 0.3 mkm, the distance between the source and gate is LSG = 1.5 mkm, and the distance between the gate and drain is LGD = 2.2 mkm. For modeling, consider a layer doped with carbon, the thickness of which is 0.3 mkm, and the layer is located at a distance of 20 nm from the channel. The Simulation showed that with an increase in the concentration of carbon doping of the buffer, the breakdown voltage increases in the range UB = 225 – 360 (V). When the layer thickness changes to 0.4 mkm, the breakdown voltage increases in the range UB = 230 – 446 (V). For a structure where the gate length is LG = 0.8 mkm, the distance between the source and the gate is LSG = 1.0 mkm, the distance between the gate and drain is LGD = 3.0 mkm, the breakdown voltage increases in the range UB = 300 – 622 (V).

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